Здесь собрана информация о среднестатистическом разгоне чипов памяти разных производителей и времени доступа.

SDR EtronTech 4ns @ 265
SDR EliteMT 4.5ns @ 260
SDR EtronTech 4.8ns @ 250
SDR EtronTech 5ns @ 230-250
SDR EliteMT 5ns @ 245
SDR Hynix 5ns @ 220-230
SDR Winbond 5ns @ 215-225
SDR Samsung 5ns @ 205-225
SDR Hyundai 5.5ns @ 205-225
SDR Samsung 5.5ns @ 210
SDR Hyundai 6ns @ 190-215
SDR EliteMT 6ns @ 210
SDR Micron 6ns @ 190-210
SDR Samsung 6ns @ 180-210
SDR Mira 6ns @ 170-210
SDR Winbond 6ns @ 175-185
SDR Samsung 7ns @ 200
SDR M.tec 7ns @ 190
SDR LG 7ns @ 178
SDR Hyundai 7ns @ 170
SDR DTM 7ns @ 170
SDR Winbond 7ns @ 165
SDR Micron 8ns @ 160

DDR SD Samsung 2.8ns @ 365-380
DDR SD Hynix 3.3ns @ 310-357.5
DDR SD Samsung 3.3ns @ 320-350
DDR SD ESMT 3.5ns @ 290-295
DDR SD EtronTech 3.5ns @ 285-290
DDR SD Samsung 3.6ns @ 283.5-347.5
DDR SD Hynix 3.6ns @ 285-320
DDR SD EliteMT 3.8ns @ 280
DDR SD A.T.M 3.8ns @ 270
DDR SD Hynix 4ns @ 255-305
DDR SD Samsung 4ns @ 280-283
DDR SD EtronTech 4ns @ 255-275
DDR SD ESMT 4ns @ 270
DDR SD EliteMT 4ns @ 260
DDR SD EtronTech 4.5ns @ 250-260
DDR SD Samsung 5ns @ 230-260
DDR SD EtronTech 5ns @ 250
DDR SD ESMT 5ns @ 235-240
DDR SD EliteMT 5ns @ 220-240
DDR SD Hynix 5ns @ 220-230
DDR Hyundai 5.5ns @ 205
DDR Hyundai 6ns @ 190-205

DDR SGRAM Hynix 4ns @ 280-290
DDR SGRAM Samsung 4ns @ 252-260
DDR SGRAM Samsung 5ns @ 230-250
DDR SGRAM Ascend 5ns @ 205
DDR SGRAM Samsung 5.5ns @ 195
DDR SGRAM Ascend 6ns @ 210
DDR SGRAM Tonicom 6ns @ 205
DDR SGRAM Samsung 6ns @ 190-210
DDR SGRAM Infineon 6ns @ 170-210